p-channel enhancement mode field symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 13 20 39 50 r jl 0.56 1.5 a repetitive avalanche energy l=0.1mh c 120 mj maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 25 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state -85 -65 -200 avalanche current c -30 power dissipation a t a =25c p dsm continuous drain current b,g maximum units parameter t a =25c g t a =100c b -30 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d 2.5 w t a =70c 1.6 AOD403 features v ds (v) = -30v i d = -85a (v gs = -20v) r ds(on) < 6m ? (v gs = -20v) r ds(on) < 7.6m ? (v gs = -10v) general description the AOD403 uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. with the excellent thermal resistance of the dpak package, this device is well suited for high current load applications. standard product a od403 is pb-free (meets rohs & sony 259 specifications). AOD403l is a green product ordering option. AOD403 and AOD403l are electrically identical. g d s t o-252 d-pak t op view drain connected to tab g d s effect transistor www.freescale.net.cn 1 / 4
AOD403 symbol min typ max units bv dss -30 v -0.01 -1 t j =55c -5 i gss 100 na v gs(th) -1.5 -2.6 -3.5 v i d(on) -60 a 5.1 6 t j =125c 7.1 8.5 6.3 7.6 m ? g fs 44 s v sd -0.72 -1 v i s -104 a c iss 4360 5300 pf c oss 1050 pf c rss 762 pf r g 2.5 3 ? q g 93.2 120 nc q gs 18 nc q gd 29.2 nc t d(on) 18 25 ns t r 30 45 ns t d(off) 51 75 ns t f 35 50 ns t rr 39.5 48 ns q rr 30.8 37 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =0.75 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-20a gate source charge m ? v gs =-10v, i d =-20a i s =-1a,v gs =0v v ds =-5v, i d =-20a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-20v, i d =-20a reverse transfer capacitance i f =-20a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on steady-state r ja and the maximum allowed junction temperature of 150c. the value in any given application depend s on the user's specific board design, and the maximum temperature of 175c may be used if the pcb or heatsink allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by the package current capability. rev 4: aug 2005 www.freescale.net.cn 2 / 4
AOD403 typical electrical and thermal characteristic s -15 -12.8 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 20 40 60 80 100 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2v -4.5v -5 v -6v -10v 0 10 20 30 40 50 60 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 0 2 4 6 8 10 0 102030405060 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-20v v gs =-10v 4 8 12 16 20 24 4 8 12 16 20 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-10v i d =-20a 2 5 c 125c i d =-20a v gs =-20v -4v www.freescale.net.cn 3 / 4
AOD403 typical electrical and thermal characteristic s -15 -12.8 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 102030405060708090100 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-20a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d t o n p d www.freescale.net.cn 4 / 4
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